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    Turning up the heat on next-generation semiconductors

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    The scorching surface of Venus, where temperatures can climb to 480 degrees Celsius (hot enough to melt lead), is an inhospitable place for humans and machines alike. One reason scientists have not yet been able to send a rover to the planet’s surface is because silicon-based electronics can’t operate in such extreme temperatures for an extended period of time.For high-temperature applications like Venus exploration, researchers have recently turned to gallium nitride, a unique material that can withstand temperatures of 500 degrees or more.The material is already used in some terrestrial electronics, like phone chargers and cell phone towers, but scientists don’t have a good grasp of how gallium nitride devices would behave at temperatures beyond 300 degrees, which is the operational limit of conventional silicon electronics.In a new paper published in Applied Physics Letters, which is part of a multiyear research effort, a team of scientists from MIT and elsewhere sought to answer key questions about the material’s properties and performance at extremely high temperatures.  They studied the impact of temperature on the ohmic contacts in a gallium nitride device. Ohmic contacts are key components that connect a semiconductor device with the outside world.The researchers found that extreme temperatures didn’t cause significant degradation to the gallium nitride material or contacts. They were surprised to see that the contacts remained structurally intact even when held at 500 degrees Celsius for 48 hours.Understanding how contacts perform at extreme temperatures is an important step toward the group’s next goal of developing high-performance transistors that could operate on the surface of Venus. Such transistors could also be used on Earth in electronics for applications like extracting geothermal energy or monitoring the inside of jet engines.“Transistors are the heart of most modern electronics, but we didn’t want to jump straight to making a gallium nitride transistor because so much could go wrong. We first wanted to make sure the material and contacts could survive, and figure out how much they change as you increase the temperature. We’ll design our transistor from these basic material building blocks,” says John Niroula, an electrical engineering and computer science (EECS) graduate student and lead author of the paper.His co-authors include Qingyun Xie PhD ’24; Mengyang Yuan PhD ’22; EECS graduate students Patrick K. Darmawi-Iskandar and Pradyot Yadav; Gillian K. Micale, a graduate student in the Department of Materials Science and Engineering; senior author Tomás Palacios, the Clarence J. LeBel Professor of EECS, director of the Microsystems Technology Laboratories, and a member of the Research Laboratory of Electronics; as well as collaborators Nitul S. Rajput of the Technology Innovation Institute of the United Arab Emirates; Siddharth Rajan of Ohio State University; Yuji Zhao of Rice University; and Nadim Chowdhury of Bangladesh University of Engineering and Technology.Turning up the heatWhile gallium nitride has recently attracted much attention, the material is still decades behind silicon when it comes to scientists’ understanding of how its properties change under different conditions. One such property is resistance, the flow of electrical current through a material.A device’s overall resistance is inversely proportional to its size. But devices like semiconductors have contacts that connect them to other electronics. Contact resistance, which is caused by these electrical connections, remains fixed no matter the size of the device. Too much contact resistance can lead to higher power dissipation and slower operating frequencies for electronic circuits.“Especially when you go to smaller dimensions, a device’s performance often ends up being limited by contact resistance. People have a relatively good understanding of contact resistance at room temperature, but no one has really studied what happens when you go all the way up to 500 degrees,” Niroula says.For their study, the researchers used facilities at MIT.nano to build gallium nitride devices known as transfer length method structures, which are composed of a series of resistors. These devices enable them to measure the resistance of both the material and the contacts.They added ohmic contacts to these devices using the two most common methods. The first involves depositing metal onto gallium nitride and heating it to 825 degrees Celsius for about 30 seconds, a process called annealing.The second method involves removing chunks of gallium nitride and using a high-temperature technology to regrow highly doped gallium nitride in its place, a process led by Rajan and his team at Ohio State. The highly doped material contains extra electrons that can contribute to current conduction.“The regrowth method typically leads to lower contact resistance at room temperature, but we wanted to see if these methods still work well at high temperatures,” Niroula says.A comprehensive approachThey tested devices in two ways. Their collaborators at Rice University, led by Zhao, conducted short-term tests by placing devices on a hot chuck that reached 500 degrees Celsius and taking immediate resistance measurements.At MIT, they conducted longer-term experiments by placing devices into a specialized furnace the group previously developed. They left devices inside for up to 72 hours to measure how resistance changes as a function of temperature and time.Microscopy experts at MIT.nano (Aubrey N. Penn) and the Technology Innovation Institute (Nitul S. Rajput) used state-of-the-art transmission electron microscopes to see how such high temperatures affect gallium nitride and the ohmic contacts at the atomic level.“We went in thinking the contacts or the gallium nitride material itself would degrade significantly, but we found the opposite. Contacts made with both methods seemed to be remarkably stable,” says Niroula.While it is difficult to measure resistance at such high temperatures, their results indicate that contact resistance seems to remain constant even at temperatures of 500 degrees, for around 48 hours. And just like at room temperature, the regrowth process led to better performance.The material did start to degrade after being in the furnace for 48 hours, but the researchers are already working to boost long-term performance. One strategy involves adding protective insulators to keep the material from being directly exposed to the high-temperature environment.Moving forward, the researchers plan to use what they learned in these experiments to develop high-temperature gallium nitride transistors.“In our group, we focus on innovative, device-level research to advance the frontiers of microelectronics, while adopting a systematic approach across the hierarchy, from the material level to the circuit level. Here, we have gone all the way down to the material level to understand things in depth. In other words, we have translated device-level advancements to circuit-level impact for high-temperature electronics, through design, modeling and complex fabrication. We are also immensely fortunate to have forged close partnerships with our longtime collaborators in this journey,” Xie says.This work was funded, in part, by the U.S. Air Force Office of Scientific Research, Lockheed Martin Corporation, the Semiconductor Research Corporation through the U.S. Defense Advanced Research Projects Agency, the U.S. Department of Energy, Intel Corporation, and the Bangladesh University of Engineering and Technology.Fabrication and microscopy were conducted at MIT.nano, the Semiconductor Epitaxy and Analysis Laboratory at Ohio State University, the Center for Advanced Materials Characterization at the University of Oregon, and the Technology Innovation Institute of the United Arab Emirates. More

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      A new way for quantum computing systems to keep their cool

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      Heat causes errors in the qubits that are the building blocks of a quantum computer, so quantum systems are typically kept inside refrigerators that keep the temperature just above absolute zero (-459 degrees Fahrenheit).

      But quantum computers need to communicate with electronics outside the refrigerator, in a room-temperature environment. The metal cables that connect these electronics bring heat into the refrigerator, which has to work even harder and draw extra power to keep the system cold. Plus, more qubits require more cables, so the size of a quantum system is limited by how much heat the fridge can remove.

      To overcome this challenge, an interdisciplinary team of MIT researchers has developed a wireless communication system that enables a quantum computer to send and receive data to and from electronics outside the refrigerator using high-speed terahertz waves.

      A transceiver chip placed inside the fridge can receive and transmit data. Terahertz waves generated outside the refrigerator are beamed in through a glass window. Data encoded onto these waves can be received by the chip. That chip also acts as a mirror, delivering data from the qubits on the terahertz waves it reflects to their source.

      This reflection process also bounces back much of the power sent into the fridge, so the process generates only a minimal amount of heat. The contactless communication system consumes up to 10 times less power than systems with metal cables.

      “By having this reflection mode, you really save the power consumption inside the fridge and leave all those dirty jobs on the outside. While this is still just a preliminary prototype and we have some room to improve, even at this point, we have shown low power consumption inside the fridge that is already better than metallic cables. I believe this could be a way to build largescale quantum systems,” says senior author Ruonan Han, an associate professor in the Department of Electrical Engineering and Computer Sciences (EECS) who leads the Terahertz Integrated Electronics Group.

      Han and his team, with expertise in terahertz waves and electronic devices, joined forces with associate professor Dirk Englund and the Quantum Photonics Laboratory team, who provided quantum engineering expertise and joined in conducting the cryogenic experiments.

      Joining Han and Englund on the paper are first author and EECS graduate student Jinchen Wang; Mohamed Ibrahim PhD ’21; Isaac Harris, a graduate student in the Quantum Photonics Laboratory; Nathan M. Monroe PhD ’22; Wasiq Khan PhD ’22; and Xiang Yi, a former postdoc who is now a professor at the South China University of Technology. The paper will be presented at the International Solid-States Circuits Conference.

      Tiny mirrors

      The researchers’ square transceiver chip, measuring about 2 millimeters on each side, is placed on a quantum computer inside the refrigerator, which is called a cryostat because it maintains cryogenic temperatures. These super-cold temperatures don’t damage the chip; in fact, they enable it to run more efficiently than it would at room temperature.

      The chip sends and receives data from a terahertz wave source outside the cryostat using a passive communication process known as backscatter, which involves reflections. An array of antennas on top of the chip, each of which is only about 200 micrometers in size, act as tiny mirrors. These mirrors can be “turned on” to reflect waves or “turned off.”

      The terahertz wave generation source encodes data onto the waves it sends into the cryostat, and the antennas in their “off” state can receive those waves and the data they carry.

      When the tiny mirrors are turned on, they can be set so they either reflect a wave in its current form or invert its phase before bouncing it back. If the reflected wave has the same phase, that represents a 0, but if the phase is inverted, that represents a 1. Electronics outside the cryostat can interpret those binary signals to decode the data.

      “This backscatter technology is not new. For instance, RFIDs are based on backscatter communication. We borrow that idea and bring it into this very unique scenario, and I think this leads to a good combination of all these technologies,” Han says.

      Terahertz advantages

      The data are transmitted using high-speed terahertz waves, which are located on the electromagnetic spectrum between radio waves and infrared light.

      Because terahertz waves are much smaller than radio waves, the chip and its antennas can be smaller, too, which would make the device easier to manufacture at scale. Terahertz waves also have higher frequencies than radio waves, so they can transmit data much faster and move larger amounts of information.

      But because terahertz waves have lower frequencies than the light waves used in photonic systems, the terahertz waves carry less quantum noise, which leads to less interference with quantum processors.

      Importantly, the transceiver chip and terahertz link can be fully constructed with standard fabrication processes on a CMOS chip, so they can be integrated into many current systems and techniques.

      “CMOS compatibility is important. For example, one terahertz link could deliver a large amount of data and feed it to another cryo-CMOS controller, which can split the signal to control multiple qubits simultaneously, so we can reduce the quantity of RF cables dramatically. This is very promising.” Wang says.

      The researchers were able to transmit data at 4 gigabits per second with their prototype, but Han says the sky is nearly the limit when it comes to boosting that speed. The downlink of the contactless system posed about 10 times less heat load than a system with metallic cables, and the temperature of the cryostat fluctuated up to a few millidegrees during experiments.

      Now that the researchers have demonstrated this wireless technology, they want to improve the system’s speed and efficiency using special terahertz fibers, which are only a few hundred micrometers wide. Han’s group has shown that these plastic wires can transmit data at a rate of 100 gigabits per second and have much better thermal insulation than fatter, metal cables.

      The researchers also want to refine the design of their transceiver to improve scalability and continue boosting its energy efficiency. Generating terahertz waves requires a lot of power, but Han’s group is studying more efficient methods that utilize low-cost chips. Incorporating this technology into the system could make the device more cost-effective.

      The transceiver chip was fabricated through the Intel University Shuttle Program. More

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      in Data Management & Statistics

      New chip for mobile devices knocks out unwanted signals

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      Imagine sitting in a packed stadium for a pivotal football game — tens of thousands of people are using mobile phones at the same time, perhaps video chatting with friends or posting photos on social media. The radio frequency signals being sent and received by all these devices could cause interference, which slows device performance and drains batteries.

      Designing devices that can efficiently block unwanted signals is no easy task, especially as 5G networks become more universal and future generations of wireless communication systems are developed. Conventional techniques utilize many filters to block a range of signals, but filters are bulky, expensive, and drive up production costs.

      MIT researchers have developed a circuit architecture that targets and blocks unwanted signals at a receiver’s input without hurting its performance. They borrowed a technique from digital signal processing and used a few tricks that enable it to work effectively in a radio frequency system across a wide frequency range.

      Their receiver blocked even high-power unwanted signals without introducing more noise, or inaccuracies, into the signal processing operations. The chip, which performed about 40 times better than other wideband receivers at blocking a special type of interference, does not require any additional hardware or circuitry. This would make the chip easier to manufacture at scale.

      “We are interested in developing electronic circuits and systems that meet the demands of 5G and future generations of wireless communication systems. In designing our circuits, we look for inspirations from other domains, such as digital signal processing and applied electromagnetics. We believe in circuit elegance and simplicity and try to come up with multifunctional hardware that doesn’t require additional power and chip area,” says senior author Negar Reiskarimian, the X-Window Consortium Career Development Assistant Professor in the Department of Electrical Engineering and Computer Science (EECS) and a core faculty member of the Microsystems Technology Laboratories.

      Reiskarimian wrote the paper with EECS graduate students Soroush Araei, who is the lead author, and Shahabeddin Mohin. The work is being presented at the International Solid-States Circuits Conference.

      Harmonic interference

      The researchers developed the receiver chip using what is known as a mixer-first architecture. This means that when a radio frequency signal is received by the device, it is immediately converted to a lower-frequency signal before being passed on to the analog-to-digital converter to extract the digital bits that it is carrying. This approach enables the radio to cover a wide frequency range while filtering out interference located close to the operation frequency.

      While effective, mixer-first receivers are susceptible to a particular kind of interference known as harmonic interference. Harmonic interference comes from signals that have frequencies which are multiples of a device’s operating frequency. For instance, if a device operates at 1 gigahertz, then signals at 2 gigahertz, 3 gigahertz, 5 gigahertz, etc., will cause harmonic interference. These harmonics can be indistinguishable from the original signal during the frequency conversion process.    

      “A lot of other wideband receivers don’t do anything about the harmonics until it is time to see what the bits mean. They do it later in the chain, but this doesn’t work well if you have high-power signals at the harmonic frequencies. Instead, we want to remove harmonics as soon as possible to avoid losing information,” Araei says.

      To do this, the researchers were inspired by a concept from digital signal processing known as block digital filtering. They adapted this technique to the analog domain using capacitors, which hold electric charges. The capacitors are charged up at different times as the signal is received, then they are switched off so that charge can be held and used later for processing the data.  

      These capacitors can be connected to each other in various ways, including connecting them in parallel, which enables the capacitors to exchange the stored charges. While this technique can target harmonic interference, the process results in significant signal loss. Stacking capacitors is another possibility, but this method alone is not enough to provide harmonic resilience.

      Most radio receivers already use switched-capacitor circuits to perform frequency conversion. This frequency conversion circuitry can be combined with block filtering to target harmonic interference.

      A precise arrangement

      The researchers found that arranging capacitors in a specific layout, by connecting some of them in series and then performing charge sharing, enabled the device to block harmonic interference without losing any information.

      “People have used these techniques, charge sharing and capacitor stacking, separately before, but never together. We found that both techniques must be done simultaneously to get this benefit. Moreover, we have found out how to do this in a passive way within the mixer without using any additional hardware while maintaining signal integrity and keeping the costs down,” he says.

      They tested the device by simultaneously sending a desired signal and harmonic interference. Their chip was able to block harmonic signals effectively with only a slight reduction in signal strength. It was able to handle signals that were 40 times more powerful than previous, state-of-the-art wideband receivers. More